1/5 t820w t830w 8a snubberless? triac symbol parameter value unit i t(rms) rms on-state current (full sine wave) tc= 100c 8 a i tsm non repetitive surge peak on-state current (full cycle, t j initial = 25c ) f = 50hz t = 20ms 100 a f = 60hz t = 16.7ms 105 i 2 ti 2 t value for fusing tp = 10 ms 55 a 2 s di/dt critical rate of rise of on-state current i g =2xi gt ,tr 100ns f = 120 hz tj = 125c 50 a/ s v dsm /v rsm non repetitive surge peak off-state voltage tp = 10ms tj = 25c v drm /v rrm + 100 v i gm peak gate current tp = 20s tj = 125c 4 a p g(av) average gate power dissipation tj = 125c 1 w t stg t j storage junction temperature range operating junction temperature range -40to+150 -40to+125 c absolute ratings (limiting values) symbol value unit i t(rms) 8a v drm /v rrm 600 and 800 v i gt 20 to 30 ma main features isowatt220ab (plastic) a1 a2 g g a2 a1 based on st? snubberless technology providing high commutation performances, the t820-600w/800w are specially recommended for use on inductive loads, thanks to their high commutation perfor- mances, such as washing-machines drum motor controllers. they comply with ul standards (ref. e81734). description www.kersemi.com
t820w / t830w 2/5 symbol parameter value unit rth(j-a) junction to ambient 60 c/w rth(j-c) junction to case (ac) 3.1 c/w thermal resistances symbol test conditions quadrant t820 t830 unit i gt (1) v d =12v r l =33 ? i-ii-iii max. 20 30 ma v gt i-ii-iii max. 1.3 v v gd v d =v drm r l =3.3k ? tj = 125c i-ii-iii min. 0.2 v i h (2) i t = 250ma max. 35 50 ma i l i g = 1.2i gt i - iii max. 50 70 ma ii max. 60 80 ma dv/dt (2) v d =67% v drm gate open tj = 125c min. 300 500 v/ s (di/dt)c (2) without snubber tj = 125c min. 4.5 5.5 a/ms electrical characteristics (tj = 25c, unless otherwise specified) symbol test conditions value unit v tm (2) i tm = 11a tp = 380s tj = 25c max. 1.4 v v to (2) threshold voltage tj = 125c max. 0.85 v r d (2) dynamic resistance tj = 125c max. 40 m ? i drm i rrm v drm =v rrm tj = 25c tj = 125c max 5 1 a ma note 1 : minimum igt is guaranted at 5% of igt max. note 2 : for both polarities of a2 referenced to a1. static characteristics part number voltage sensitivity type package t820-600w 600v 20 ma snubberless isowatt220ab T820-800W 800v 20 ma snubberless isowatt220ab t830-600w 600v 30 ma snubberless isowatt220ab t830-800w 800v 30 ma snubberless isowatt220ab product selector www.kersemi.com
t820w / t830w 3/5 t 8 xx - x00 w triac series current: 8a sensitivity: 20: 20ma 30: 30ma voltage: 600: 600v 800: 800v package: w: isowatt220ab ordering information part number marking weight base quantity packing mode t820-600w t820600w 2.3 g 50 tube T820-800W t820800w 2.3 g 50 tube t830-600w t830600w 2.3 g 50 tube t830-800w t830800w 2.3 g 50 tube other information 0 1 2 3 4 5 6 7 8 9 012345678 it(rms)(a) =180 p(w) 180 fig. 1: maximum power dissipation versus rms on-state current. 0 1 2 3 4 5 6 7 8 9 10 0 25 50 75 100 125 tc(c) =180 it(rms)(a) fig. 2: rms on-state current versus case tem- perature. 1.e-03 1.e-02 1.e-01 1.e+00 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 tp(s) zth(j-a) zth(j-c) k=[zth/rth] fig. 3: relative variation of thermal impedance versus pulse duration. 1 10 100 0123456 vtm(v) tj=25c tj=125c tj max. : vto = 0.85 v rd = 40 m ? itm(a) fig. 4: on-state characteristics (maximum val - ues). www.kersemi.com
t820w / t830w 4/5 10 100 1000 0.01 0.10 1.00 10.00 tp(ms) tj initial=25c di/dt limitation: 50a/s itsm i2t itsm(a), i t(a s) 22 fig. 6: non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of i 2 t. 0 10 20 30 40 50 60 70 80 90 100 110 1 10 100 1000 number of cycles non repetitive tj initial=25c repetitive tc=100c t=20ms itsm(a) fig. 5: surge peak on-state current versus number of cycles. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 igt, ih, il[tj] / igt, ih, il[tj = 25c] igt ih & il tj(c) fig. 7: relative variation of gate trigger current, holding current and latching current versus junc - tion temperature (typical values). 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1.0 10.0 100.0 dv/dt (v/s) (di/dt)c [(dv/dt)c] / specified (di/dt)c fig. 8: relative variation of critical rate of decrease of main current versus reapplied dv/dt (typical val - ues). 0 1 2 3 4 5 6 7 8 0 25 50 75 100 125 tj(c) (di/dt)c [tj] / (di/dt)c [tj = 125c] fig. 9: relative variation of critical rate of decrease of main current versus junction temperature. www.kersemi.com
t820w / t830w 5/5 package mechanical data isowatt220ab ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 b 2.50 2.70 0.098 0.106 d 2.50 2.75 0.098 0.108 e 0.40 0.70 0.016 0.028 f 0.75 1.00 0.030 0.039 f1 1.15 1.70 0.045 0.067 f2 1.15 1.70 0.045 0.067 g 4.95 5.20 0.195 0.205 g1 2.40 2.70 0.094 0.106 h 10.00 10.40 0.394 0.409 l2 16.00 typ. 0.630 typ. l3 28.60 30.60 1.125 1.205 l4 9.80 10.60 0.386 0.417 l6 15.90 16.40 0.626 0.646 l7 9.00 9.30 0.354 0.366 diam 3.00 3.20 0.118 0.126 cooling method : c recommended torque value : 0.55 m.n. maximum torque value : 0.70 m.n. www.kersemi.com
|
